Probe guide plate and semiconductor inspection apparatus

ABSTRACT

A probe guide plate used for a semiconductor inspection apparatus that inputs and outputs an electrical signal for inspecting an object via a probe needle, the probe guide plate includes a silicon substrate provided with a through hole that penetrates the silicon substrate from one surface to another surface through which the probe needle is inserted, the through hole including a first tapered portion provided at an end portion at the one surface side such that the hole size of which increases as it approaches the one surface, and a second tapered portion provided at an end portion at the other surface side such that the hole size of which increases as it approaches the other surface; and a silicon oxide film formed on an inner wall surface of the through hole including the first tapered portion and the second tapered portion.

CROSS-REFERENCE TO RELATED APPLICATION

The present application is based on and claims the benefit of priorityof Japanese Priority Application No. 2013-112367 filed on May 28, 2013,the entire contents of which are hereby incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a probe guide plate and a semiconductorinspection apparatus using a probe guide plate.

2. Description of the Related Art

Conventionally, a semiconductor inspection apparatus has been used forinspecting semiconductor devices, in which probe needles arerespectively inserted in guide holes of a probe guide plate.Specifically, by such a semiconductor inspection apparatus, electriccharacteristics of a semiconductor device is inspected by temporarilyelectrically connecting the semiconductor device with an externalsemiconductor inspection system by directly pushing front ends of probeneedles to electrode pads of the semiconductor device.

As a material of the probe guide plate, ceramics, silicon or the like isused, for example. A ceramics probe guide plate is manufactured byforming guide holes by drilling after sintering machinable ceramics orthe like. However, it is difficult to form small through holes bydrilling, and there is a problem in that cost may be increased when thenumber of guide holes is increased.

On the other hand, a silicon probe guide plate is manufactured byforming guide holes by photolithography including patterning and dryetching and forming an silicon oxide film in the guide holes or the likeby thermal oxidation or the like to ensure insulation properties, forexample. As the guide holes are formed at the same time byphotolithography, cost for manufacturing the silicon probe guide platedoes not change depending on the number of guide holes. Thus, there isan advantage in manufacturing the silicon probe guide plate with guideholes of high density.

However, as a fracture toughness value of general silicon and a siliconoxide film is about 1 MPa·m^(1/2), which is smaller than a fracturetoughness value about 4 MPa·m^(1/2) of general alumina ceramics. Thus,for the silicon probe guide plate, it is necessary to form the siliconoxide film to have a certain thickness (about 5 μm, for example) inorder to ensure slidability of probe needles.

However, there has been a problem in that warp may be generated in thesilicon probe guide plate due to a difference in thermal expansioncoefficients of silicon and a silicon oxide film when the thickness ofthe silicon oxide film is made thicker in the silicon probe guide plate.Further, such warp tends to significantly occur when the guide holes areprovided at a high density.

PATENT DOCUMENT

-   [Patent Document 1] Japanese Laid-open Patent Publication No.    2012-93127

SUMMARY OF THE INVENTION

The present invention is made in light of the above problems, andprovides a silicon probe guide plate or the like in which generation ofwarp is reduced.

According to an embodiment, there is provided a probe guide plate usedfor a semiconductor inspection apparatus that inputs and outputs anelectrical signal for inspecting an object via a probe needle, the probeguide plate including a silicon substrate provided with a through holethat penetrates the silicon substrate from one surface to anothersurface through which the probe needle is inserted, the through holeincluding a first tapered portion provided at an end portion at the onesurface side such that the hole size of which increases as it approachesthe one surface, and a second tapered portion provided at an end portionat the other surface side such that the hole size of which increases asit approaches the other surface; and a silicon oxide film formed on aninner wall surface of the through hole including the first taperedportion and the second tapered portion.

Note that also arbitrary combinations of the above-described elements,and any changes of expressions in the present invention, made amongmethods, devices, systems and so forth, are valid as embodiments of thepresent invention.

BRIEF DESCRIPTION OF THE DRAWINGS

Other objects, features and advantages of the present invention willbecome more apparent from the following detailed description when readin conjunction with the accompanying drawings.

FIG. 1 is a cross-sectional view illustrating an example of asemiconductor inspection apparatus of a first embodiment;

FIG. 2A and FIG. 2B are views illustrating an example of a probe guideplate used for the semiconductor inspection apparatus of the firstembodiment;

FIG. 3A to FIG. 3C are views illustrating an example of manufacturingsteps of the probe guide plate used for the semiconductor inspectionapparatus of the first embodiment;

FIG. 4A and FIG. 4B are views illustrating an example of manufacturingsteps of the probe guide plate used for the semiconductor inspectionapparatus of the first embodiment;

FIG. 5A and FIG. 5B are views illustrating an example of a probe guideplate used for the semiconductor inspection apparatus of an alternativeexample 1 of the first embodiment; and

FIG. 6A and FIG. 6B are views illustrating an example of a probe guideplate used for the semiconductor inspection apparatus of an alternativeexample 2 of the first embodiment.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The invention will be described herein with reference to illustrativeembodiments. Those skilled in the art will recognize that manyalternative embodiments can be accomplished using the teachings of thepresent invention and that the invention is not limited to theembodiments illustrated for explanatory purposes.

It is to be noted that, in the explanation of the drawings, the samecomponents are given the same reference numerals, and explanations arenot repeated.

First Embodiment

First, an example of a structure of a semiconductor inspection apparatus1 of the first embodiment is explained. FIG. 1 is a cross-sectional viewillustrating an example of the semiconductor inspection apparatus 1 ofthe first embodiment. FIG. 2A and FIG. 2B are views illustrating anexample of a probe guide plate 10 used for the semiconductor inspectionapparatus 1 of the first embodiment. FIG. 2A is a plan view and FIG. 2Bis a partial enlarged cross-sectional view.

In FIG. 1, FIG. 2A and FIG. 2B, an X-direction is a direction parallelto a first surface 11 a of a silicon substrate 11, which will beexplained later, and a Y-direction is a direction perpendicular to theX-direction (depth direction of a paper surface). A Z-direction is adirection (thickness direction of the silicon substrate 11)perpendicular to the X-direction and the Y-direction (the same in otherdrawings). In FIG. 2A, the silicon oxide film 12 is expressed by dottedpatterns for an explanation purpose.

With reference to FIG. 1, FIG. 2A and FIG. 2B, the semiconductorinspection apparatus 1 of the first embodiment inputs and outputselectrical signals for inspecting an object via a plurality of probeneedles 22. The semiconductor inspection apparatus 1 includes a probeguide plate 10, a relay substrate 20 and a holder 30. The probe guideplate 10 and the relay substrate 20 are fixed by the holder 30(positions of the probe guide plate 10 and the relay substrate 20 aredetermined by the holder 30).

In FIG. 1, a semiconductor device 200 is illustrated, which is anexample of the object to be inspected by the semiconductor inspectionapparatus 1. The semiconductor device 200 is provided with a pluralityof electrode pads 210. Although FIG. 1 illustrates a status (aninspection status) in which the probe needles 22 of the semiconductorinspection apparatus 1 and the electrode pads 210 of the semiconductordevice 200 are in contact with each other, respectively, the probeneedles 22 and the electrode pads 210 come to a condition in which theyare not in contact with each other, respectively, by moving thesemiconductor inspection apparatus 1 in the Z-direction.

The probe guide plate 10 includes a silicon substrate 11 and a siliconoxide film 12. The silicon substrate 11 is provided with a plurality ofthrough holes 111. The silicon substrate 11 may have a foursquare shape,a length of each edge of about 3 to 7 cm, in a plan view, for example.The thickness of the silicon substrate 11 (in the Z-direction) may beabout 100 to 300 μm, for example. Here, “in a plan view” means a shapeof an object seen from the Z-direction in FIG. 1, FIG. 2A and FIG. 2B.

Each of the through holes 111 penetrates the silicon substrate 11 fromthe first surface 11 a to a second surface 11 b, which is an oppositesurface of the first surface 11 a. The through holes 111 are aligned inthe X-direction and in the Y-direction with a predetermined alignmentpitch, for example. The alignment of the through holes 111 may bearbitrarily determined in accordance with an alignment of electrodes ofan object to be inspected. An alignment pitch of the through holes 111may be arbitrarily determined, and may be about 60 to 100 μm, forexample. Each of the through holes 111 (a portion except a first taperedportion 111 x and a second tapered portion 111 y, which will beexplained later) may have a foursquare shape, a length of each edge ofabout 40 to 80 μm, in a plan view, for example. Alternatively, each ofthe through holes 111 may have a rectangular shape, a circular shape, anellipse shape or the like.

Each of the through holes 111 is provided with the first tapered portion111 x at an end portion of the first surface 11 a side of the siliconsubstrate 11 whose hole size increases as it approaches the firstsurface 11 a (the width becomes wider as it approaches the first surface11 a in a cross-sectional view). Each of the through holes 111 isprovided with the second tapered portion 111 y at an end portion of thesecond surface 11 b side of the silicon substrate 11 whose diameterincreases as it approaches the second surface 11 b (the width becomeswider as it approaches the second surface 11 b in a cross-sectionalview). An inclined angle θ of the first tapered portion 111 x or thesecond tapered portion 111 y with respect to the first surface 11 a ofthe silicon substrate 11 or the second surface 11 b of the siliconsubstrate 11, respectively, is about 55 decree, for example.

The silicon oxide film 12 is formed on the first surface 11 a, thesecond surface 11 b and an inner wall surface of each of the throughholes 111 including the first tapered portion 111 x and the secondtapered portion 111 y, of the silicon substrate 11. The silicon oxidefilm 12 is provided to insulate the silicon substrate 11 from probeneedles 22, which will be explained later.

The silicon oxide film 12 (which will be referred to as “12 a” as well)formed at the first surface 11 a of the silicon substrate 11 has athickness t₁ (hereinafter, referred to as a “film thickness t₁”). Thesilicon oxide film 12 (which will be referred to as “12 b” as well)formed at the second surface 11 b of the silicon substrate 11 has athickness t₂ (hereinafter, referred to as a “film thickness t₂”). Thesilicon oxide film 12 (which will be referred to as “12 c” as well)formed at the inner wall surface of each of the through holes 111including the first tapered portion 111 x and the second tapered portion111 y has a thickness t₃ (hereinafter, referred to as a “film thicknesst₃”). In this embodiment, the film thicknesses t₁, t₂ and t₃ of thesilicon oxide film 12 are substantially the same within a range of 0.5to 5 μm, and more preferably, within a range of 1 to 3 μm.

According to studies by the inventors, it has been revealed thatsufficient insulating reliability can be ensured when the film thicknessof the silicon oxide film 12 is thicker than or equal to 0.5 μm, andgeneration of warp in the probe guide plate 10 can be reduced when thefilm thickness of the silicon oxide film 12 is thinner than or equal to5 μm (see examples). The reason why warp of the probe guide plate 10becomes large when the film thickness of the silicon oxide film 12 isthicker is that there is a difference between thermal expansioncoefficient (about 3 ppm/° C.) of silicon and thermal expansioncoefficient (about 0.3 ppm/° C). of a silicon oxide film (thermal oxidefilm).

The relay substrate 20 includes a substrate body 21, the plurality ofprobe needles 22 and a plurality of electrodes 23. For a material of thesubstrate body 21, ceramic, silicon, glass, insulating resin(epoxy-based resin or the like), or the like may be used, for example.The thickness of the substrate body 21 may be about 0.5 to 2 mm, forexample.

The probe needles 22 are provided to penetrate the relay substrate 20such that one end of each of the probe needles 22 at the probe guideplate 10 side protrudes from the relay substrate 20 and the other end ofeach of the probe needles 22 is connected with the respective electrode23 provided at the surface of the relay substrate 20 at an opposite sideof the probe guide plate 10 side. The probe needles 22 are provided atpositions corresponding to electrode pads 210 of a semiconductor device200, which is an example of the object to be inspected.

One end of each of the probe needles 22 protrudes from a surface of therelay substrate 20 at the probe guide plate 10 side, and furtherprotrudes from the second surface 11 b of the silicon substrate 11 ofthe probe guide plate 10 via the respective through hole 111 of theprobe guide plate 10. The probe needles 22 protruded from the secondsurface 11 b of the silicon substrate 11 contact the electrode pads 210of the semiconductor device 200 to be electrically connected,respectively. As such, the through holes 111 function to guide the probeneedles 22 that are inserted in the through holes 111, respectively.

As the probe needles 22 repeatedly contact the electrode pads 210 of thesemiconductor device 200, respectively, the material for the probeneedles 22 may be hard, hard to deform or capable of enduring abrasion.The material for the probe needles 22 may be nickel (Ni), copper (Cu),gold (Au), rhodium (Rh) or the like, for example. Although each of theprobe needles 22 has a line shape in the example illustrated in FIG. 1,each of the probe needles 22 may have a curved or bent shape or the likethat can adjust (absorb) a difference in alignment pitches of theelectrodes 23 and the electrode pads 210 when the alignment pitch of theelectrodes 23 is wider than the alignment pitch of the electrode pads210, for example.

The electrodes 23 of the relay substrate 20 are electrically connectedto the semiconductor inspection system (not illustrated in the drawings)via a wiring board (not illustrated in the drawings), an interposer (notillustrated in the drawings) or the like. The relay substrate 20 has afunction to respectively relay electrical signals output from theelectrode pads 210 of the semiconductor device 200 to the semiconductorinspection system (not illustrated in the drawings). Further, the relaysubstrate 20 has a function to respectively relay electrical signalsfrom the semiconductor inspection system (not illustrated in thedrawings) to input the electrode pads 210 of the semiconductor device200.

As described above, the probe guide plate 10 and the relay substrate 20are fixed by the holder 30 (positions of the probe guide plate 10 andthe relay substrate 20 are determined by the holder 30). Here, theholder 30 may have a mechanism to relax a pressure caused between eachof the probe needles 22 and the respective electrode pad 210.

When inspecting the semiconductor device 200, the semiconductor device200 is mounted on a placing table (not illustrated in the drawings)capable of adjusting a position of the semiconductor device 200 withrespect to the semiconductor inspection apparatus 1. Then, the positionof the semiconductor device 200 is adjusted such that the probe needles22 of the semiconductor inspection apparatus 1 match the electrode pads210 of the semiconductor device 200, respectively. The semiconductorinspection apparatus 1 is configured to be movable in the Z-direction.Thereafter, by moving the semiconductor inspection apparatus 1 in theZ-direction (toward the semiconductor device 200), the probe needles 22are pushed to the electrode pads 210 of the semiconductor device 200with a predetermined force, respectively, so that a front end portion ofeach of the probe needles 22 contacts an upper surface of the respectiveelectrode pad 210.

When the probe needles 22 contact the electrode pads 210, respectively,the electrode pads 210 are electrically connected with the semiconductorinspection system (not illustrated in the drawings). As a result, thesemiconductor inspection system (not illustrated in the drawings) caninspect the electric characteristics of the semiconductor device 200. Aprobing test by which electrical connection between circuits of thesemiconductor device 200 is examined, a burn-in test by which occurrenceof failure is examined by applying a thermal or electrical stress to acircuit of the semiconductor device 200 at a high temperature toaccelerate the occurrence of failure may be performed as the inspectionof the electric characteristics. Further, a final test by which thesemiconductor device 200 is examined with a high frequency signal or thelike may be performed as the inspection of the electric characteristics.

Next, a method of manufacturing the probe guide plate 10 of the firstembodiment is explained. FIG. 3A to FIG. 4B are views illustrating anexample of manufacturing steps of the probe guide plate 10 used for thesemiconductor inspection apparatus 1 of the first embodiment.

First, in a step illustrated in FIG. 3A, a wafer 110, which becomes thesilicon substrate 11, is prepared. Then, a resist layer 300 (any ofnegative or positive) provided with open portions 310 x corresponding tothe through holes 111 is formed on a first surface 110 a of the wafer110. For the wafer 110, a silicon wafer with a (100) surface having adiameter of 6 inch (about 150 mm), 8 inch (about 200 mm), 12 inch (about300 mm) or the like may be used, for example. The thickness of the wafer110 may be 0.625 mm (in case of 6 inch), 0.725 mm (in case of 8 inch),0.775 mm (in case of 12 inch) or the like, for example. In thisembodiment, an example is described in which the following steps areperformed on the wafer and thereafter, the wafer is individualized.Alternatively, the wafer may be individualized first, and the followingsteps may be performed on the individualized components.

The resist layer 300 is formed by coating liquid or paste resistcomposed of photosensitive resin composition including acrylic-basedresin, epoxy-based resin, imide-based resin or the like on the firstsurface 110 a ((100) surface) of the wafer 110, for example.Alternatively, the resist layer 300 may be formed by laminating a filmresist composed of photosensitive resin composition includingacrylic-based resin, epoxy-based resin, imide-based resin or the like onthe first surface 110 a of the wafer 110, for example. Then, the openportions 310 x are formed by exposing and developing the coated orlaminated resist. With these processes, the resist layer 300 providedwith the open portions 310 x is formed. Further alternatively, a filmresist previously provided with the open portions 310 x may be laminatedon the first surface 110 a of the wafer 110.

Further, before forming the resist layer 300, an HMDS(hexamethyldisilazane) process may be performed on the first surface 110a of the wafer 110. With this process, adhesion between the resist layer300 and the wafer 110 can be improved.

Then, in a step illustrated in FIG. 3B, the first surface 110 a of thewafer 110 is provided with concave portions 110 x by etching the wafer110 from the first surface 110 a of the wafer 110 using the resist layer300 as a mask. The concave portions 110 x may be formed by anisotropicdry etching such as reactive ion etching (DRIE: Deep Reactive IonEtching) using SF₆ (sulfur hexafluoride) or the like, for example. Thealignment pitch of the concave portions 110 x corresponds to thealignment pitch of the open portions 310 x, and may be about 60 to 100μm, for example. Each of the concave portions 110 x may have afoursquare shape, a length of each edge of about 40 to 80 μm, in a planview.

Next, in a step illustrated in FIG. 3C, the resist layer 300 (see FIG.3B) is removed. Then, the wafer 110 is grinded from a second surface 110b ((100) surface) using a backside grinder or the like to be thinner.After grinding the wafer 110, the wafer 110 may be washed enough toremove shavings or the like. The thickness of the wafer 110 may be about100 to 300 μm, for example. With this configuration, the through holes111 that penetrate the wafer 110 are formed from the concave portions110 x, respectively. Here, in the step illustrated in FIG. 3B, the depthof each of the concave portions 110 x may be made deeper than thethickness of the wafer 110 after being grinded in the step illustratedin FIG. 3C.

Next, in a step illustrated in FIG. 4A, the first tapered portion 111 xis formed at an end portion of each of the through holes 111 at thefirst surface 110 a side of the wafer 110 and the second tapered portion111 y is formed at an end portion of each of the through holes ill atthe second surface 110 b of the wafer 110 by etching the wafer 110. Thefirst tapered portion 111 x and the second tapered portion 111 y may beformed by performing anisotropic wet etching on the both end portions ofeach of the through holes 111 by immersing the wafer 110 in 25% TMAH(tetramethyl ammonium hydroxide) aqueous solution at about 90° C. for apredetermined period (about a few minutes), for example.

Further, a pretreatment such as an excimer process, a UV process(process of irradiating ultraviolet light), a plasma process or the likemay be performed on the wafer 110 before the anisotropic wet etching inorder to improve the wettability to the TMAH aqueous solution. Byimproving the wettability to the TMAH aqueous solution, the firsttapered portion 111 x and the second tapered portion 111 y can be evenlyformed.

The inclined angle θ of the first tapered portion 111 x or the secondtapered portion 111 y, with respect to the first surface 110 a or thesecond surface 110 b of the wafer 110, respectively, may be about 55degree, for example. Alternatively, the first tapered portion 111 x andthe second tapered portion 111 y may be formed by anisotropic wetetching using alkaline aqueous solution such as KOH (potassiumhydroxide), EDP (ethylenediamine•pyrocatechol) or the like, for example.

Next, in a step illustrated in FIG. 4B, the silicon oxide film 12 (12 a,12 b and 12 c) is integrally formed on the first surface 110 a, thesecond surface 110 b and the inner wall surface of each of the throughholes 111 including the first tapered portion 111 x and the secondtapered portion 111 y, of the wafer 110. The silicon oxide film 12 maybe formed by wet thermal oxidation by which the vicinity of the surfaceof the wafer 110 is heated to be more than or equal to 1000° C., forexample to thermally oxidize the surface of the wafer 110.

At this time, the film thicknesses of the silicon oxide film 12 a formedon the first surface 11 a, the silicon oxide film 12 b formed on thesecond surface 11 b and the silicon oxide film 12 c formed on the innerwall surface of each of the through holes 111 are substantially thesame. As illustrated in FIG. 2B, the film thicknesses t₁, t₂ and t₃ ofthe silicon oxide films 12 a, 12 b and 12 c, respectively, may besubstantially the same within a range of 0.5 to 5 μm, and morepreferably, within a range of 1 to 3 μm, for example.

After the step illustrated in FIG. 4B, the wafer 110 on which thesilicon oxide film 12 is formed is cut at predetermined positions by adicer or the like. With this, the probe guide plate 10 (see FIG. 1, FIG.2A and FIG. 2B) is formed.

According to the probe guide plate 10 of the first embodiment, the firsttapered portion 111 x and the second tapered portion 111 y are formed atboth end portions of each of the through holes 111. With this, apossibility that the probe needle 22 and the probe guide plate 10 aredamaged can be reduced even when the probe needle 22 contacts the probeguide plate 10. For example, a possibility that a corner of the throughhole 111 of the probe guide plate 10 is chipped can be reduced.

Further, as the possibility that the probe guide plate 10 is damaged canbe reduced by providing the first tapered portion 111 x and the secondtapered portion 111 y, the thickness of the silicon oxide film 12 thatcovers the silicon substrate 11 can be made thinner (0.5 to 5 μm, andmore preferably, 1 to 3 μm, for example) compared with a conventionaltechnique. With this, generation of warp in the probe guide plate 10 dueto the difference in the thermal expansion coefficients of the siliconsubstrate 11 and the silicon oxide film 12 can be reduced.

Further, as the first tapered portion 111 x and the second taperedportion 111 y are provided, the silicon substrate 11 becomes symmetry inthe thickness direction. With this configuration as well, generation ofwarp in the silicon substrate 11 (in other words, generation of warp inthe probe guide plate 10) can be reduced.

Conventionally, warp in a probe guide plate is significantly generatedif the guide holes for the probe needles are provided with high density.However, according to the probe guide plate 10, as generation of warp isreduced due to making the thickness of the silicon oxide film 12thinner, it is possible to provide the through holes 111, which areguide holes, of the probe needle 22 with higher density.

ALTERNATIVE EXAMPLE OF FIRST EMBODIMENT

In the first embodiment, an example is described in which the filmthicknesses t₁, t₂ and t₃ of the silicon oxide films 12 a, 12 b and 12c, respectively, are substantially the same. In an alternative example 1of the first embodiment, an example is described in which the filmthicknesses t₁ and t₂ of the silicon oxide films 12 a and 12 b are madethinner than the film thicknesses t₃ of the silicon oxide film 12 c. Inthe alternative example 1 of the first embodiment, the same componentsas the first embodiment are given the same reference numerals, andexplanations are not repeated.

FIG. 5A and FIG. 5B are views illustrating an example of a probe guideplate 10A used for the semiconductor inspection apparatus 1 of thealternative example 1 of the first embodiment. FIG. 5A is a plan viewand FIG. 5B is a partial enlarged cross-sectional view. In FIG. 5A, thesilicon oxide film 12 is expressed by dotted patterns for an explanationpurpose.

The cross-sectional view illustrating an example of the semiconductorinspection apparatus of the alternative example 1 of the firstembodiment becomes the same as that illustrated in FIG. 1 except thethicknesses of the silicon oxide film 12 and thus, the cross-sectionalview is not illustrated.

As illustrated in FIG. 5A and FIG. 5B, the probe guide plate 10A of thealternative example 1 of the first embodiment is different from theprobe guide plate 10 (see FIG. 1, FIG. 2A and FIG. 2B) in that the filmthicknesses t₁ and t₂ of the silicon oxide films 12 a and 12 b arethinner than the film thickness t₃ of the silicon oxide film 12 c. Thefilm thicknesses t₁, t₂ and t₃ of the silicon oxide film 12 (12 a, 12 band 12 c) may be 0.5 to 5 μm, and more preferably, within a range of 1to 5 μm, for example, and have a relationship of t₁(≈t₂)<t₃.

The film thickness t₁ of the silicon oxide film 12 a formed on the firstsurface 11 a and the film thickness t₂ of the silicon oxide film 12 bformed on the second surface 11 b, of the silicon substrate 11, may beabout 0.5 to 2 μm, respectively, for example. The film thickness t₃ ofthe silicon oxide film 12 c formed at the inner wall surface of each ofthe through holes 111 including the first tapered portion 111 x and thesecond tapered portion 111 y may be about 5 μm, for example.

First, the same steps as those explained above with reference to FIG. 3Ato FIG. 4A of the first embodiment are performed to manufacture theprobe guide plate 10A. Then, in the step illustrated in FIG. 4B of thefirst embodiment, the silicon oxide film 12 (12 a, 12 b and 12 c) whosethicknesses t₁, t₂ and t₃ are all about 5 μm is formed. Then, after thestep illustrated in FIG. 4B of the first embodiment, resist is filled ineach of the through holes 111 including the first tapered portion 111 xand the second tapered portion 111 y.

Next, the silicon oxide films 12 a and 12 b formed on the first surface11 a and the second surface 11 b of the silicon substrate 11,respectively, are etched to make the film thicknesses of them (12 a and12 b) thinner than the silicon oxide film 12 c formed at the inner wallsurface of each of the through holes 111. The film thickness of each ofthe silicon oxide films 12 a and 12 b may be about 0.5 to 2 μm, forexample. Etching may be wet etching using buffered hydrofluoric acid,for example, dry etching using CF₄ (tetrafluoromethane), for example, orthe like. Thereafter, the resist filled in each of the through holes 111is removed. Then, the wafer 110 on which the silicon oxide film 12 (12a, 12 b and 12 c) is formed is cut at predetermined positions by a diceror the like to obtain the probe guide plate 10A in which the thicknessest₁ and t₂ of the silicon oxide films 12 a and 12 b, respectively, arethinner than the thickness t₃ of the silicon oxide film 12 c.

According to the probe guide plate 10A of the alternative example 1 ofthe first embodiment, in addition to the advantages of the firstembodiment, following advantages can be obtained.

The film thicknesses t₁ and t₂ of the silicon oxide films 12 a and 12 b,respectively, which are considered to influence more on generation ofwarp in the probe guide plate 10A, are made thinner than the filmthickness t₃ of the silicon oxide film 12 c, which is considered toinfluence less on generation of warp in the probe guide plate 10A. Thus,the generation of the warp in the probe guide plate 10A can be furtherreduced while ensuring insulation properties and slidability between thesilicon oxide film 12 and each of the probe needles 22.

Here, it is exemplified that the film thickness t₃ of the silicon oxidefilm 12 c is about 5 μm. Alternatively, the film thickness t₃ of thesilicon oxide film 12 c may be set thicker within a wider range as thefilm thickness t₃ of the silicon oxide film 12 c influence less on thegeneration of the warp in the probe guide plate 10A. For example, thefilm thickness t₃ of the silicon oxide film 12 c may be an arbitralvalue within a range of about 3 to 10 μm while considering theinsulation properties or slidability between the silicon oxide film 12and each of the probe needles 22.

ALTERNATIVE EXAMPLE 2 OF FIRST EMBODIMENT

In the first embodiment, an example is of the silicon oxide films 12 a,12 b and 12 c, respectively, are substantially the same. In analternative example 2 of the first embodiment, an example is describedin which the film thicknesses t₁ and t₂ of the silicon oxide film 12 (12a and 12 b) are zero. In the alternative example 2 of the firstembodiment, the same components as the first embodiment are given thesame reference numerals, and explanations are not repeated.

FIG. 6A and FIG. 6B are views illustrating an example of a probe guideplate 10B used for the semiconductor inspection apparatus 1 of thealternative example 2 of the first embodiment. FIG. 6A is a plan viewand FIG. 6B is a partial enlarged cross-sectional view. In FIG. 6A, thesilicon oxide film 12 is expressed by dotted patterns for an explanationpurpose.

The cross-sectional view illustrating an example of the semiconductorinspection apparatus of the alternative example 2 of the firstembodiment becomes the same as that illustrated in FIG. 1 except thethicknesses of the silicon oxide film 12 and thus, the cross-sectionalview is not illustrated.

As illustrated in FIG. 6A and FIG. 6B, the probe guide plate 10B of thealternative example 2 of the first embodiment is different from theprobe guide plate 10 (see FIG. 1, FIG. 2A and FIG. 2B) in that thesilicon oxide film 12 is not formed on the first surface 11 a and thesecond surface 11 b of the silicon substrate 11. In FIG. 6B, partscorresponding to the silicon oxide films 12 a and 12 b with the filmthicknesses t₁ and t₂, respectively, (see FIG. 2B or FIG. 5B) do notexist (in other words, t₁=t₂=0).

The silicon oxide film 12 (12 c) is formed on the inner wall surface ofeach of the through holes 111 including the first tapered portion 111 xand the second tapered portion 111 y. The film thickness t₃ of thesilicon oxide film 12 c may be about 5 μm, for example.

The probe guide plate 10B may be manufactured by the same steps as thosefor the probe guide plate 10A of the alternative example 1 of the firstembodiment. However, there is a difference in that the silicon oxidefilms 12 a and 12 b formed on the first surface 11 a and the secondsurface 11 b of the silicon substrate 11, respectively, are completelyremoved when etching the silicon oxide film 12 except the silicon oxidefilm 12 c formed on the inner wall surface of each of the through holes111 while each of the through holes 111 is filled with the resist asdescribed above.

According to the probe guide plate 10B of the alternative example 2 ofthe first embodiment, in addition to the advantages of the firstembodiment, following advantages can be obtained.

The silicon oxide films 12 a and 12 b, which are considered to influencemore on generation of warp in the probe guide plate 10A, are completelyremoved. Then, only the silicon oxide film 12 c, which is considered toinfluence less on generation of warp in the probe guide plate 10A, isleft. Thus, the generation of the warp in the probe guide plate 10B canbe further reduced while ensuring insulation properties and slidabilitybetween the silicon oxide film 12 and each of the probe needles 22.However, regarding the insulation properties, the probe guide plate 10of the first embodiment or the probe guide plate 10A of the alternativeexample 1 of the first embodiment may have more advantage.

Here, similar to the alternative example 1 of the first embodiment, thefilm thickness t₃ of the silicon oxide film 12 c may be set at anarbitral value within a range of about 3 to 10 μm.

EXAMPLE

Simulation was conducted on generation of warp in the probe guide plate10 while varying the film thickness (t₁=t₂=t₃) of the silicon oxide film12 of the probe guide plate 10 of the first embodiment (see FIG. 1, FIG.2A and FIG. 2B). The silicon substrate 11 had a rectangular shape of 25mm×20 mm, in a plan view, with a thickness of 150 μm. The siliconsubstrate 11 was provided with 300 through holes 111 with an alignmentpitch of 300 μm. Each of the through holes 111 (a portion except thefirst tapered portion 111 x and the second tapered portion 111 y) had afoursquare shape, a length of each edge of about 250 μm, in a plan view.A result of the simulation is illustrated in Table 1.

TABLE 1 THICKNESS OF SILICON  5 μm  3 μm   1 μm OXIDE FILM 12 WARPEDAMOUNT 260 μm 115 μm 1.0 μm

As illustrated in Table 1, it was confirmed that the thinner the filmthickness (t₁=t₂=t₃) of the silicon oxide film 12 was, the less thewarped amount of the probe guide plate 10 became.

As described above, the thermal expansion coefficient of silicon isabout 3 ppm/° C. and the thermal expansion coefficient of the siliconoxide film is about 0.3 ppm/° C. It is considered that the warped amountin the probe guide plate 10 is increased as the thickness of the siliconoxide film 12 becomes thicker due to the difference in such thermalexpansion coefficients.

Here, the thickness of the silicon oxide film 12 in a directionperpendicular to the thickness direction (the Z direction) of thesilicon substrate 11 influence less on the generation of the warp in theprobe guide plate 10. In other words, it is considered that the filmthickness t₃ of the silicon oxide film 12 formed on the inner wallsurface of each of the through holes 111 including the first taperedportion 111 x and the second tapered portion 111 y does not influencegeneration of the warp in the probe guide plate 10. Thus, it can beconsidered that the generation of the warp in the probe guide plate 10can be reduced by making only the film thicknesses t₁ and t₂ of thesilicon oxide films 12 a and 12 b thinner (including a case wheret₁=t₂=0), without reducing all of the film thicknesses t₁, t₂ and t₃ ofthe silicon oxide film 12.

By making the only the film thicknesses t₁ and t₂ thinner (including acase where t₁=t₂=0), without changing the film thickness t₃ of thesilicon oxide film 12, the generation of the warp of the probe guideplate can be reduced while ensuring insulation properties andslidability between the silicon oxide film 12 and each of the probeneedles 22.

In other words, in order to ensure the insulation properties and theslidability between the silicon oxide film 12 and each of the probeneedles 22, it is preferable to make the film thickness of the siliconoxide film 12 thinner. On the other hand, in order to reduce thegeneration of the warp in the probe guide plate 10, it is preferable tomake the film thickness of the silicon oxide film 12 thinner. Thus, byonly reducing the film thicknesses t₁ and t₂ of the film thickness ofthe silicon oxide film 12 (including a case where t₁=t₂=0) withoutreducing the film thickness t₃ of the silicon oxide film 12, both ofthese advantages can be obtained.

According to the embodiments, a silicon probe guide plate or the like inwhich generation of warp is reduced can be provided.

Various aspects of the subject-matter described herein are set outnon-exhaustively in the following numbered clauses:

1. A method of manufacturing a probe guide plate used for asemiconductor inspection apparatus that inputs and outputs an electricalsignal for inspecting an object via a probe needle, comprising:

forming a through hole that penetrates one surface of a siliconsubstrate to another surface of the silicon substrate and through whichthe probe needle is inserted;

forming a first tapered portion and a second tapered portion at an endportion of the through hole at the one surface side and at an endportion of the through hole at the other surface side, respectively, byperforming anisotropic wet etching on the silicon substrate in which thethrough hole is formed, the hole size of the first tapered portionincreasing as it approaches the one surface side of the siliconsubstrate, and the hole size of the second tapered portion increasing asit approaches the other surface side of the silicon substrate; and

forming a silicon oxide film on an inner wall surface of the throughhole including the first tapered portion and the second tapered portionby performing thermal oxidation on the silicon substrate.

2. The method of manufacturing the probe guide plate according to clause1,

wherein the forming the silicon oxide film includes

-   -   integrally forming a silicon oxide film on the one surface, the        other surface and the inner wall surface of the through hole        including the first tapered portion and the second tapered        portion, and    -   making the film thicknesses of the silicon oxide film formed on        the one surface and the other surface thinner than the film        thickness of the silicon oxide film formed on the inner wall        surface of the through hole by etching the silicon oxide film        formed on the one surface and the other surface.

3. The method of manufacturing the probe guide plate according to clause1,

the one surface and the other surface of the silicon substrate are (100)surface of the silicon substrate, respectively.

4. The method of manufacturing the probe guide plate according to clause1, further comprising:

before the forming the first tapered portion and the second taperedportion, performing an excimer process, a process of irradiatingultraviolet light or a plasma process on the silicon substrate, and

wherein in the forming the first tapered portion and the second taperedportion, anisotropic wet etching is performed using tetramethyl ammoniumhydroxide aqueous solution.

Although a preferred embodiment of the probe guide plate, thesemiconductor inspection apparatus and the method of manufacturing theprobe guide plate has been specifically illustrated and described, it isto be understood that minor modifications may be made therein withoutdeparting from the spirit and scope of the invention as defined by theclaims.

The present invention is not limited to the specifically disclosedembodiments, and numerous variations and modifications may be madewithout departing from the spirit and scope of the present invention.

What is claimed is:
 1. A probe guide plate used for a semiconductorinspection apparatus that inputs and outputs an electrical signal forinspecting an object via a probe needle, the probe guide platecomprising: a silicon substrate provided with a through hole thatpenetrates the silicon substrate from one surface to another surfacethrough which the probe needle is inserted, the through hole including afirst tapered portion provided at an end portion at the one surface sidesuch that the hole size of which increases as it approaches the onesurface, and a second tapered portion provided at an end portion at theother surface side such that the hole size of which increases as itapproaches the other surface; and a silicon oxide film formed on aninner wall surface of the through hole including the first taperedportion and the second tapered portion.
 2. The probe guide plateaccording to claim 1, further comprising: silicon oxide filmsrespectively formed on the one surface and the other surface of thesilicon substrate, film thicknesses of the silicon oxide films formed onthe one surface and the other surface being thinner than a filmthickness of the silicon oxide film formed on the inner wall surface ofthe through hole.
 3. The probe guide plate according to claim 1, whereinthe one surface and the other surface are (100) surface of the siliconsubstrate, respectively.
 4. A semiconductor inspection apparatuscomprising: the probe guide plate according to claim 1; and a probeneedle that is inserted in the through hole, the semiconductorinspection apparatus being configured to input and output an electricalsignal for inspecting an object via the probe needle.